| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1594405 | Solid State Communications | 2010 | 4 Pages |
Abstract
AgGaSe2, AgGa0.9In0.1Se2, and AgGa0.8In0.2Se2 single crystals grown by the horizontal Bridgman technique were studied utilizing Raman spectroscopy excited with 633- and 784-nm lasers at temperatures varied from 77 to 300Â K. The resonant Raman scattering associated with a transition from the Î6(B) of the valence band to the conduction band Î6 of AgGa0.9In0.1Se2crystal is demonstrated. Resonant enhancements of the longitudinal optical (LO) polar modes of Î5 (or E) including Î5L(W4), Î5L(W3), Î5L(X5), and Î5L(Î15), and their overtones and combinations in the crystal at 77 K were observed.
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Authors
Yunlong Cui, Utpal N. Roy, Pijush Bhattacharya, Adrian Parker, Arnold Burger, Jonathan T. Goldstein,