Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1594459 | Solid State Communications | 2009 | 5 Pages |
Abstract
By the aid of temperature- and magnetic-field-dependent Hall effect measurements, we have extracted the multi-carrier transport information in N-doped and N-In codoped p- ZnO thin films grown on Si substrates through mobility spectrum analysis. It is found that owing to the compensation between free electrons and holes, the two-dimensional hole gas from ZnO/Si interface layers becomes determinant and results in the high p-type conductivity and high hole mobility in the ZnO samples. Compared with N-doping, the N-In codoping introduces many In donors and increases acceptor incorporation, as well as enhancing the free hole mobility due to the short-range dipole-like scattering.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
H.B. Ye, J.F. Kong, W. Pan, W.Z. Shen, B. Wang,