| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1594496 | Solid State Communications | 2010 | 4 Pages |
Abstract
Sr1−xPrxTiO3 films were prepared by metal organic deposition method on (111) Pt/Ti/SiO2/Si substrates. Pr-doping greatly improves the dc leakage behavior of the films. The samples with x=0.075x=0.075 show excellent electric field frequency and temperature stability of dielectric properties, while the x=0.025x=0.025 samples indicate an obvious dielectric relaxation behavior and better polarization versus applied electric field (PP–EE) hysteresis loops. These peculiar electrical properties can be explained mainly by the Pr-doping-induced changes in the free charge carriers, the lattice distortion, the charge transfer process and polar nanoregions. In addition, the variable valence of Pr ions may also have significant impacts.
Keywords
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Xiaofei Wang, Xiaomei Lu, Yuyan Weng, Wei Cai, Xiaobo Wu, Yunfei Liu, Fengzhen Huang, Jinsong Zhu,