Article ID Journal Published Year Pages File Type
1594543 Solid State Communications 2010 4 Pages PDF
Abstract

A Si-based light emitter has long been the final key component for electronic and photonic integrated circuits on Si, because Si has an indirect band gap. Atomistic and electronic structures and energy gains of formation of possible nitrogen (N) and fluorine (F) complexes in Si have been researched from first-principles, in order to engineer the band structure of Si for light emission. The calculated results show that the substitutional nitrogen NS and bond center fluorine FBC pair complex has large stabilization energy, and that the pair-complex-doped Si has direct band gap, which is reduced with respect to that of Si. These results lead to the possibilities of doping-based engineering of Si optical properties with introduction of deep-level impurity and charge compensation.

Related Topics
Physical Sciences and Engineering Materials Science Materials Science (General)
Authors
, , ,