Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1594637 | Solid State Communications | 2009 | 4 Pages |
Abstract
Potential fluctuations due to donor-acceptor compensation have been used to observe localization-delocalization transition in semi-insulating GaAs. Photoinduced transients, resulting from relaxation of stored charges in potential valleys, have two components. The long-lived power law decay at low temperature signifies a microscopically inhomogeneous disordered phase, and single exponential decay at a higher temperature signifies a homogeneous ordered phase. Temperature dependence of steady state photocurrent and kinetics of photocurrent decay suggest percolation as a possible mechanism for photoinduced transition in semi-insulating GaAs.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
D. Kabiraj, Subhasis Ghosh,