| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1594671 | Solid State Communications | 2009 | 4 Pages |
Abstract
Faraday rotation in indium (In) doped Cd1âxMnxTe (CMT) single crystals is studied for the first time at room temperature. We extend a multioscillator model for the Faraday rotation of In doped CMT (CMT: In) by using an analytical expression for the refractive index that includes the contributions from interband transitions at the Î, L and X points of the Brillouin zone as well as the contribution from transition caused by doping. Based on the band gap at the Î-point in the Brillouin zone (E0) and EDA gap caused by doping, a simple energy level distribution model is put forward. Finally, the results of the PL spectra verify the existence of the EDA.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Lijun Luan, Wanqi Jie, Jijun Zhang, Peisen Li,