| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1594719 | Solid State Communications | 2008 | 5 Pages |
Abstract
Quantum mechanical features of the electron transport in a SOI MOSFET are described within the Wigner function formalism which explicitly deals with electron scattering due to ionized impurities, acoustic phonons and surface roughness at the Si/SiO2 interface. The calculated device characteristics are obtained as a function of the thickness of the semiconductor layer. An analysis of the I–V characteristics of the MOSFET shows a substantial reduction of the short-channel effect with a decrease in the channel thickness of the device.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
M.D. Croitoru, V.N. Gladilin, V.M. Fomin, J.T. Devreese, W. Magnus, W. Schoenmaker, B. Sorée,