| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1594741 | Solid State Communications | 2009 | 5 Pages |
Abstract
In this paper, the formation of a p-n ZnO thin film-nanowires hybrid homojunction on silicon substrate has been investigated. P-type ZnO thin film is formed by both e-beam evaporation and RF magnetron sputtering techniques. In order to fabricate 3-dimentional hybrid structures, ZnO nanowires were grown on p-type ZnO films by metal organic chemical vapor deposition techniques. The X-ray diffraction results showed that both ZnO thin films and nanowires are c-axis oriented. The formation of p-n ZnO homojunction is verified by current-voltage measurements. Typical diode behavior and photoconductivity were observed in both designs.
Keywords
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
J.P. Kar, M. Kumar, J.H. Choi, S.N. Das, S.Y. Choi, J.M. Myoung,