| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1594748 | Solid State Communications | 2009 | 5 Pages |
Abstract
The local structure of Mn atoms in Ga1âxMnxN has been investigated by the Mn L3 edge x-ray absorption spectrum (XAS) at total electron yield mode, which preferentially looks at atoms near the surface. A modeling defects configuration, Mn5 micro-clusters complexed with substitutional MnGa and interstitial MnI is found for a higher Mn doping concentration. This new configuration is also confirmed by the total energy calculations.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
D. Wang, X.Y. Zhang, J. Wang, S.Q. Wei, W.S. Yan, D.W. Boukhvalov,