Article ID Journal Published Year Pages File Type
1594817 Solid State Communications 2010 4 Pages PDF
Abstract
We have calculated the composition of tensile strained Ge1−zCz on Ge1−x−y Six Sny heterostructures for which the indirect conduction band (L) lies above the zone centre (Γ) conduction band in the GeC layer in type I alignment. Linear interpolation of parameters indicates the possibility of achieving emission at 1.55 μm; however the direct gap shows a lower value when bowing parameters are considered.
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Physical Sciences and Engineering Materials Science Materials Science (General)
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The calculated composition of Ge1−zCz/Ge1−x−ySixSny heterostructure grown on Si for direct gap emission from Ge1−zCz at 1.55μm
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