| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1594854 | Solid State Communications | 2009 | 4 Pages |
Abstract
We observed slow relaxation of magnetoresistance in quantum well structures GaAs-AlGaAs with a selective doping of both wells and barrier regions which allowed partial filling of the upper Hubbard band. Such a behavior is explained as related to magnetic-field driven redistribution of the carriers between sites with different occupation numbers due to spin correlation on the doubly occupied centers. This redistribution, in its turn, leads to slow multi-particle relaxations in the Coulomb glass formed by the charged centers.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
N.V. Agrinskaya, V.I. Kozub, D.V. Shamshur, A. Shumilin,