| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1594891 | Solid State Communications | 2010 | 4 Pages |
Abstract
The interband optical transitions of InAs/InxGa1−xAs dots-in-a-well (DWELL) structure is investigated theoretically and compared with experiment. The electronic structure was obtained by solving a steady-state effective-mass Schrödinger equation in cylindrical co-ordinates taking into account the strain effects. Optical transition energies as well as envelope functions of both electron and hole are calculated, respectively. The simulated transition energies agree very well with the experimental results. Our investigation is significant not only for the understanding of the optical properties of this novel material system, but also for the guidance of optimal structure design and growth.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Rui Chen, H.Y. Liu, H.D. Sun,