Electron mobility in modulation doped AlGaN/GaN and InGaN/GaN quantum wells: A comparative study

The low field mobility characteristics of two dimensional electrons confined to modulation doped AlGaN/GaN and InGaN/GaN quantum wells are studied using ensemble Monte Carlo technique and the results are compared. Acoustic and optical phonon, ionized remote impurity and interface roughness scatterings are considered in mobility calculations. It is found that InGaN/GaN quantum wells have superior mobility characteristics compared to AlGaN/GaN quantum wells with regard to temperature, doping concentration and spacer length.