Article ID Journal Published Year Pages File Type
1594949 Solid State Communications 2008 4 Pages PDF
Abstract
Micro-photoluminescence (PL) and micro-PL excitation (PLE) spectra were measured systematically in a 5 nm GaAs/AlAs single quantum well (QW) to investigate the predicted effect of asymmetric exciton absorption line shapes having high-energy tails due to weak localization of exciton center-of-mass motion by interface roughness. We found a characteristic change in the asymmetric shapes as the QW-interface coverage by monolayer terraces varied. Via spectral fitting using a reported model, we quantitatively obtained a localization length varying between 4-15 nm, and verified the validity as well as limitation of this model.
Related Topics
Physical Sciences and Engineering Materials Science Materials Science (General)
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