Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1594949 | Solid State Communications | 2008 | 4 Pages |
Abstract
Micro-photoluminescence (PL) and micro-PL excitation (PLE) spectra were measured systematically in a 5 nm GaAs/AlAs single quantum well (QW) to investigate the predicted effect of asymmetric exciton absorption line shapes having high-energy tails due to weak localization of exciton center-of-mass motion by interface roughness. We found a characteristic change in the asymmetric shapes as the QW-interface coverage by monolayer terraces varied. Via spectral fitting using a reported model, we quantitatively obtained a localization length varying between 4-15Â nm, and verified the validity as well as limitation of this model.
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Materials Science
Materials Science (General)
Authors
Shun Maruyama, Toshiyuki Ihara, Hirotake Itoh, Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West,