| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1595022 | Solid State Communications | 2016 | 4 Pages |
Abstract
High-k DyScO3 linear dielectric films were considered as a buffer layer for the metal-ferroelectric-insulator-semiconductor (MFIS) structures with Aurivillius Bi3.25Nd0.75Ti3O12 ferroelectric films. The DyScO3 films on Si substrates were amorphous and dense with a smooth surface morphology, showing negligible CV hysteresis and low leakage current. The remnant polarization of ∼20 μC/cm2, dielectric constant ∼400, and the loss tangent ∼0.04 were obtained for the ferroelectric Bi3.25Nd0.75Ti3O12 film on Pt/TiO2/SiO2/Si substrates. The Pt/Bi3.25Nd0.75Ti3O12/DyScO3/Si MFIS capacitors showed a large memory window of 4.0 V and excellent retention up to 1000 s, encouraging results for practical applications in nonvolatile RAM.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
R. Thomas, R.E. Melgarejo, N.M. Murari, S.P. Pavunny, R.S. Katiyar,