| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1595039 | Solid State Communications | 2009 | 4 Pages |
Abstract
A spin relaxation mechanism is proposed based on a second-order spin–flip intersubband spin–orbit coupling together with the spin-conserving scattering. The corresponding spin relaxation time is calculated via the Fermi golden rule. It is shown that this mechanism is important in symmetric GaAs (110) quantum wells with high impurity density. The dependencies of the spin relaxation time on electron density, temperature and well width are studied with the underlying physics analyzed.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Y. Zhou, M.W. Wu,