| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1595054 | Solid State Communications | 2009 | 4 Pages |
Abstract
Co-doped ZnO diluted magnetic semiconductor films were prepared on Si(100) substrates by magnetron sputtering system and the Co content varies from 0.01 to 0.15. The X-ray diffraction results showed ZnO of the wurtzite structure. The ferromagnetism was observed at room temperature. The X-ray near-edge absorption spectroscopy revealed that Co substitutes for Zn2+ ions in the valence of +2 state in the Co-doped ZnO films.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
J.H. Yang, Y. Cheng, Y. Liu, X. Ding, Y.X. Wang, Y.J. Zhang, H.L. Liu,