| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1595167 | Solid State Communications | 2009 | 5 Pages |
Abstract
Organic thin film transistors (OTFTs) with different concentrations of tetrafluorotetracyanoquinodimethane (F4-TCNQ) doped pentacene interlayer were fabricated. When a 2 wt% F4-TCNQ doped pentacene layer was incorporated between gold electrodes and a pentacene layer, the performance of the OTFT was significantly improved. The saturation mobility increased from 0.21 to 0.63cm2/Vs, the threshold voltage was reduced from −31.9 to −7.6 V, and the threshold swing varied from 5.09 to 2.40 V/dec as compared with an OTFT without interlayer. This improvement was ascribed to the reduction of the hole-injection barrier and contact resistance. Our results indicated that contact-area-limited doping is an effective way to improve OTFT performance.
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Authors
Jun Li, Xiao-Wen Zhang, Liang Zhang, Khizar-ul-Haq, Xue-Yin Jiang, Wen-Qing Zhu, Zhi-Lin Zhang,