| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1595184 | Solid State Communications | 2009 | 4 Pages |
Abstract
The 3d electronic states of transition-metal Mn dopants in Ga1âxMnxN have been investigated by Mn L-edge X-ray absorption spectroscopy (XAS) measurements. Through the XAS analysis, the valence of the Mn ions is determined. With the increase of doping concentration, the integrated intensities of L2,3 vary not monotonously, but increase first and then decrease. The relationship between the Mn doping concentration and the degree of p-d hybridization is discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Dan Wang, Xinyi Zhang, Jie Wang, Tsuneharu Koide,