Electronic transport through superlattice-like disordered carbon nanotubes

We introduce a simple method for investigating electronic transport in pure and superlattice-like disordered carbon nanotubes (SDCNTs). This model reduces the numerical calculation time and enables us to use the transfer matrix method to investigate transport in a carbon nanotube (CNT). Therefore, we consider an SDCNT device attached to metallic CNT leads, taking into account the disorder effect. Our calculations are based on the tight-binding model and the transfer matrix method. We concentrate on the localization length and density of sates (DOS) for various strengths of disorder. Our numerical results show a nearly steplike dependence of the localization length on energy at small disorder concentration. By controlling the disorder concentration and wire length, this kind of system can explain the extended states from the localized states. Our results can serve as a base for developments in designing nano-electronic devices.