Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1595289 | Solid State Communications | 2007 | 4 Pages |
Abstract
We illustrate some experimental features of the recently discovered radiation-induced zero-resistance states in the high-mobility GaAs/AlGaAs system, with a special emphasis on the interplay between the radiation-induced changes in the diagonal resistance and the Hall effect. We show that, quantum Hall effects, i.e., quantum Hall plateaus, disappear under photoexcitation, at the minima of the radiation-induced magnetoresistance oscillations.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
R.G. Mani,