| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1595333 | Solid State Communications | 2009 | 4 Pages |
Abstract
The authors theoretically investigate a triple-barrier ferromagnetic resonant-tunneling diode composing nonmagnetic couple wells and three GaMnN magnetic barriers, in which two kinds of antiparallel configurations are formed by changing the relative orientation of magnetization in the barriers. Based on a two-band model, the achievement of large magnetocurrents in the resonant bias regime is proposed under an optimal magnetization configuration. The magnetocurrents in both antiparallel configurations of triple-barrier system are much higher than that in double-barrier structure.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Yan Liu, Jiqing Wang, Huaizhong Xing, Naiyun Tang, Bin Lv, Huibing Mao, Qiang Zhao, Yong Zhang, Ziqiang Zhu,