Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1595344 | Solid State Communications | 2007 | 4 Pages |
Abstract
We report doping effects in an organic semiconductor, crystalline rubrene. Oxygen-related states are introduced (removed) by annealing in oxygen (vacuum), at an elevated temperature. Room temperature stability is found in the resulting effects: (1) about two orders of magnitude increase in carrier density at equilibrium, (2) significant modification of threshold voltages, and (3) an unchanged field-effect mobility in the on-current state. Density of states data are modeled as tunneling from the valence band in the channel region into deep-level acceptors in the adjacent region. These oxygen acceptors are the likely dopant species.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Woo-young So, J. Magnus Wikberg, David V. Lang, Oleg Mitrofanov, Christian L. Kloc, Theo Siegrist, Arthur M. Sergent, Arthur P. Ramirez,