| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1595366 | Solid State Communications | 2007 | 4 Pages |
Abstract
The hysteretic and reversible polarity-dependent resistive switching effect has been studied in epitaxial La0.67Sr0.33MnO3 (LSMO) films under DC bias stress and voltage pulses. A distinct current-voltage characteristic of the Ag/LSMO system with pronounced nonlinearity, asymmetry and hysteresis was observed, which is considered to be a precursor sign of the resistance switching. The pulsed voltage amplitude and duration dependence of the nonvolatile resistive switch were provided. Reproducible switching properties, involving non-symmetrical R-V hysteresis loop, active pulse width window and stepwise multilevel switchable capability, demonstrate well controllability with respect to future nonvolatile memory applications.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Lina Huang, Bingjun Qu, Litian Liu, Liuwan Zhang,