Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1595387 | Solid State Communications | 2008 | 4 Pages |
Abstract
In this paper, the effect of the bias on the electron transport is in detail studied in a magnetic double-barrier nanostructure. The large spin-polarization can be achieved in such a device, and the degree of the spin-polarization is strongly dependent on the applied bias. We also found that the transmission probability periodically changes with the increase of the separation LL between the two adjacent magnetic fields. These interesting properties may provide an alternative scheme to spin-polarize electrons into semiconductors, and this device may be used as a bias-tunable spin filter.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Jian-Duo Lu,