Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1595402 | Solid State Communications | 2008 | 4 Pages |
Abstract
The high-Tc ferromagnetic property in Co-doped ZnO (ZCO), mediated by donor impurity band was tested by controlled introduction of shallow donors (Al) in the Zn0.9âxCo0.1O:Alx (x=0.005 and 0.01) thin films. The saturation magnetization for the 10% Co-doped ZnO (4 emu/cc) at 300 K reduces (â¼0.8 emu/cc) due to Al doping. The resistivity drops abruptly, from â¼103Ω-cm for the ZCO film to 0.033 and 0.02Ωcm for the 0.5% and 1.0% Al doped ZCO samples, respectively. The XPS measurements did not show any signature of metallic Co clusters formation in these samples.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
K. Samanta, P. Bhattacharya, J.G.S. Duque, W. Iwamoto, C. Rettori, P.G. Pagliuso, R.S. Katiyar,