Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1595497 | Solid State Communications | 2007 | 4 Pages |
Abstract
We have observed the weak antilocalization (WAL) and beating SdH oscillation through magnetotransport measurements performed on a heavily δδ-doped In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As single quantum well in an applied magnetic field up to 13 T and a temperature at 1.5 K. Both effects are caused by the strong Rashba spin–orbit (SO) coupling due to high structure inversion asymmetry (SIA). The Rashba SO coupling constant αα and zerofield spin splitting Δ0 are estimated and the obtained values are consistent from different analysis for this sample.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
W.Z. Zhou, T. Lin, L.Y. Shang, G. Yu, Z.M. Huang, S.L. Guo, Y.S. Gui, N. Dai, J.H. Chu, L.J. Cui, D.L. Li, H.L. Gao, Y.P. Zeng,