Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1595606 | Solid State Communications | 2007 | 4 Pages |
Abstract
We present a simple route for ZnSe nanowire growth in the ablation crater on a ZnSe crystal surface. The crystal wafer, which was horizontally dipped in pure water, was irradiated by femtosecond laser pulses. No furnace, vacuum chamber or any metal catalyst were used in this experiment. The size of the nanowires is about 1–3 μm long and 50–150 nm in diameter. The growth rate is 1–3 μm/s, which is much higher than that achieved with molecular-beam epitaxy and chemical vapor deposition methods. Our discovery reveals a rapid and simple way to grow nanowires on designed micro-patterns, which may have potential applications in microscopic optoelectronics.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Tianqing Jia, Motoyoshi Baba, Min Huang, Fuli Zhao, Jianrong Qiu, Xiaojun Wu, Masaki Ichihara, Masayuki Suzuki, Ruxin Li, Zhizhan Xu, Hiroto Kuroda,