Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1595630 | Solid State Communications | 2007 | 4 Pages |
Abstract
Two new shallow donor centres NSD(i) and NSD(ii) with binding energies of 38.32Â meV and 40.09Â meV, respectively, were observed in n-type high-purity Czochralski-grown silicon single crystals by means of high-resolution photothermal ionization spectroscopy. Their spectral features and the temperature dependence of the intensity of their spectral lines imply that they are two new independent hydrogenic shallow donors. Low magnetic field investigations were performed to support our statement. The existence of the new donor centres seems to be related to the micro-defects in the sample.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
C.H. Yu, B. Zhang, Y.J. Li, W. Lu, X.C. Shen,