Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1595646 | Solid State Communications | 2008 | 5 Pages |
Abstract
Wurtzite GaN nanorods have been successfully synthesized on Si(111) substrates through ammoniating Ga2O3/Nb films under flowing ammonia atmosphere at 950Â âC in a quartz tube. The nanorods have been confirmed as hexagonal wurtzite GaN by X-ray diffraction (XRD) and selected-area electron diffraction (SAED). Scanning electron microscopy (SEM) and field-emission transmission electron microscope (FETEM) reveal that the nanorods are straight and uniform, with a diameter of ranging from 100 to 200 nm and lengths up to several microns. The photoluminescence spectra (PL) measured at room temperature only exhibit a strong emission peak at 368.5 nm. Finally, the growth mechanism of GaN nanorods is also briefly discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Bao-li Li, Hui-zhao Zhuang, Cheng-shan Xue, Shi-ying Zhang,