| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1595652 | Solid State Communications | 2008 | 5 Pages |
Abstract
Autocompensated Si-doped GaAs is studied with cross-sectional scanning tunnelling spectroscopy (X-STS). The local electronic contrasts of substitutional Si(Ga) donors and Si(As) acceptors under the (110) cleavage plane are imaged with high resolution. Si(Ga) donor atoms exhibit radially symmetrical contrasts. Si(As) acceptors have anisotropic features. The anisotropic acceptor contrasts are traced back to a tunnel process at the valence band edge. They reflect the probability density distribution of the localized acceptor hole state.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
S. Loth, M. Wenderoth, K. Teichmann, R.G. Ulbrich,