Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1595722 | Solid State Communications | 2007 | 4 Pages |
Abstract
The free carrier optical nonlinearities in direct and indirect band gap crystals have been investigated by the use of a single beam Z-scan technique. The values of two-photon absorption coefficient (β), nonlinear index n2(w), the total free carrier absorption cross-section (Ïab) and the change in the refractive index per unit carrier density (Ïnr) are determined in both direct and indirect band gap crystals. Smaller values of (β) and (Ïab) in the case of indirect band gap crystals have been attributed to phonon assisted transitions, while the smaller value of n2(w) and (Ïnr) is due to the rise in saturation taking place in the absorption.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Arun Gaur, D.K. Sharma, D.S. Ahlawat, Nageshwar Singh,