Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1595739 | Solid State Communications | 2007 | 4 Pages |
Abstract
We propose a Magnetoresistance device in a magnetically modulated two-dimensional electron gas, which can be realized experimentally by the deposition of two parallel ferromagnetic strips on the top and bottom of a semiconductor heterostructure. It is shown that there exists a significant transmission difference for electrons through the parallel and antiparallel magnetization configurations of such a device, which leads to a considerable magnetoresistance effect. It is also shown that the magnetoresistance ratio of the device depends greatly on the magnetic strength difference in the two delta barriers of the system.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Mao-Wang Lu, Guo-Jian Yang,