| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1595775 | Solid State Communications | 2008 | 5 Pages |
Abstract
The aim of the present work is to investigate defects that are introduced to Gallium Phosphide (GaP) by electron irradiation as well as their dependence on the background doping. Undoped and Te doped n-type GaP have been irradiated with 1.5 MeV electrons at fluences of 5Ã1016Â e/cm2. Deep level transient spectroscopy assessment revealed the dependence of the trap characteristics on background doping.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
G.E. Zardas, Ch.I. Symeonides, P.C. Euthymiou, G.J. Papaioannou, P.H. Yannakopoulos, M. Vesely,