| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1595811 | Solid State Communications | 2008 | 5 Pages |
Abstract
Deep level transient spectroscopy technique has been used to study the thermal dynamics of Au-Fe pairs in silicon during isochronal annealing. The formation and dissociation energies of an Au-Fe pair has been calculated by counting the number of pairs formed during each annealing. The respective energies of the Au-Fe pair are found to be â¼0.36Â eV and â¼0.46Â eV. The pairing of Auâ and Fei+ takes place under predominant electrostatic forces.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Akbar Ali, Abdul Majid,