| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1595867 | Solid State Communications | 2006 | 4 Pages |
Abstract
The wave-function of a hole localized on a magnetic ion (Mn) in GaAs is considered. The calculations are based on the zero-range potential approximation. The obtained hole density spatial distribution is in good agreement with the experimental data of STM imaging. The influence of the exchange interaction between a hole and 3d5-electrons is analyzed. It is predicted that at room temperature this interaction does not change the hole density spatial distribution. The proposed method allows us to take into account additional factors such as deformation and chaotic electrical fields, external magnetic fields, quantum size confinement etc.
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Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
A.M. Monakhov, K.S. Romanov, I.E. Panaiotti, N.S. Averkiev,