| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1596098 | Solid State Communications | 2006 | 4 Pages |
Abstract
We report the growth of well-ordered InAs QD chains by molecular beam epitaxy system. In order to analyze and extend the results of our experiment, a detailed kinetic Monte Carlo simulation is developed to investigate the effects of different growth conditions to the selective growth of InAs quantum dots (QDs). We find that growth temperature plays a more important role than growth rate in the spatial ordering of the QDs. We also investigate the effect of periodic stress on the shape of QDs in simulation. The simulation results are in good qualitative agreement with our experiment.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Chang Zhao, Y.H. Chen, C.X. Cui, B. Xu, L.K. Yu, W. Lei, J. Sun, Z.G. Wang,