Article ID Journal Published Year Pages File Type
1596167 Solid State Communications 2007 5 Pages PDF
Abstract

We have studied the structure of GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 compounds using theoretical and experimental means. Based on ab initio calculations, we propose the stacking sequence in the [111] direction of GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 phases to be Te–Ge–Te–Sb–Te–v–Te–Sb–, Te–Ge–Te–Sb–Te–v–Te–Sb–Te–Sb–Te–v–Te–Sb–, and Te–Ge–Te–Ge–Te–Sb–Te–v–Te–Sb–Te–Ge–, respectively, where v is an ordered vacancy layer. This structural model agrees with the X-ray diffraction data of sputter-deposited Ge2Sb2Te5, GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 thin films.

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Physical Sciences and Engineering Materials Science Materials Science (General)
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