Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1596167 | Solid State Communications | 2007 | 5 Pages |
Abstract
We have studied the structure of GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 compounds using theoretical and experimental means. Based on ab initio calculations, we propose the stacking sequence in the [111] direction of GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 phases to be Te–Ge–Te–Sb–Te–v–Te–Sb–, Te–Ge–Te–Sb–Te–v–Te–Sb–Te–Sb–Te–v–Te–Sb–, and Te–Ge–Te–Ge–Te–Sb–Te–v–Te–Sb–Te–Ge–, respectively, where v is an ordered vacancy layer. This structural model agrees with the X-ray diffraction data of sputter-deposited Ge2Sb2Te5, GeSb2Te4, GeSb4Te7, and Ge3Sb2Te6 thin films.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Zhimei Sun, Stepan Kyrsta, Denis Music, Rajeev Ahuja, Jochen M. Schneider,