Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1596186 | Solid State Communications | 2006 | 5 Pages |
Abstract
We report the modification of molecular beam epitaxy grown strain-relaxed single crystalline Si1âxGex layers for x=0.5 and 0.7 as a result of irradiation with 100Â MeV Au ions at 80Â K. The samples were structurally characterized by Rutherford backscattering spectrometry/channeling, transmission electron microscopy (TEM) and high-resolution X-ray diffraction before and after irradiation with fluences of 5Ã1010, 1Ã1011 and 1Ã1012Â ions/cm2, respectively. No track formation was detected in both the samples from TEM studies and finally, the crystalline to amorphous phase transformation at 1Ã1012Â ions/cm2 was examined to be higher for Si0.3Ge0.7 layers compared to Si0.5Ge0.5 layers.
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Physical Sciences and Engineering
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Materials Science (General)
Authors
A. Kanjilal, D. Kanjilal,