| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1596217 | Solid State Communications | 2006 | 4 Pages |
Abstract
The electric transport character in heterojunction composed of a La0.7Ce0.3MnO3 film and a 0.5 wt% Nb-doped SrTiO3 substrate (LCEM/STON) is investigated. It is found that the energy band gap (Eg) between LCEM and STON decreases with increasing temperatures. The most striking observation of present work is that there exists a variation of reverse transport mechanism from ionization to tunneling at the temperature of 175 K. We attribute the temperature dependence of reverse transport mechanism to co-work of Eg and the ferromagnetic (FM) insulting phase in the heterojunction. These results are helpful in configuring artificial devices using manganites.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Z.G. Sheng, W.H. Song, Y.P. Sun, J.R. Sun, B.G. Shen,