| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1596326 | Solid State Communications | 2007 | 5 Pages |
Abstract
The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in a-Si:H. It is fitted to a stretched exponential function and then two parameters ββ and ττ involved in the function are estimated as a function of saturated dangling bond density Nss. The experimental values of ββ, ττ, and Nss are compared with those calculated based on our model of light-induced defect creation in a-Si:H.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
K. Morigaki, K. Takeda, H. Hikita, P. Roca i Cabarrocas,