Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1596380 | Solid State Communications | 2006 | 6 Pages |
Abstract
The effect of Pr doping at the La site on electrical and thermal transport properties of the electron-doped manganites La0.9âxPrxTe0.1MnO3 (0â¤xâ¤0.9) has been investigated. For the samples with xâ¤0.36, there is a insulator-metal (I-M) transition while the samples with xâ¥0.54 display semiconducting behavior over the whole measured temperature range. For xâ¤0.36, the thermopower S changes sign from negative to positive with decreasing temperature and the crossover temperature increases with increasing Pr doping content x. For the samples with xâ¥0.54, S shows a positive sign over the whole temperature range studied. Both Ï(T) and S(T) data in the high temperature range can be well described by the variable-range-hopping (VRH) model for all samples studied. In the low temperature region, the Ï(T) and S(T) data for the sample with xâ¤0.36 are analyzed on the basis of the electron-magnon scattering mechanism. As regards the thermal conductivity k(T), the low temperature k peak is suppressed by Pr doping and k decreases with increasing Pr doping level. The result is analyzed as regards the combined effect of the disorder and antiferromagnetic (AFM) interaction induced by Pr doping.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
B.C. Zhao, Y.P. Sun, W.J. Lu, J. Yang, X.B. Zhu, W.H. Song,