Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1596418 | Solid State Communications | 2008 | 5 Pages |
Abstract
Diluted Magnetic Semiconductors (DMS) are of great interest as injection sources for spin-polarized currents into semiconductors. Epitaxial devices have been synthesized with an intermediate spacer layer of the same semiconductor (zinc oxide, ZnO) used to produce the DMS material (ZnCoO) ensuring a homoepitaxial junction to help reduce the interface states and conduction mismatch. We observe a large magnetoresistance of about 32% in the devices at low temperatures. The present work suggests that spin polarized transport could be achieved with DMS materials acting as the source of injected spins into a non-magnetic host.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
S. Ramachandran, J.T. Prater, N. Sudhakar, D. Kumar, J. Narayan,