| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1596485 | Solid State Communications | 2006 | 4 Pages |
Abstract
We report a large enhancement (â¼90%) in magnetoresistance in La0.82Sr0.18MnO3 (LSMO) layers by incorporating a Ï-conjugated semiconducting polymer layer in between them. The epitaxial LSMO layers were deposited by DC magnetron sputtering on SrTiO3 single crystal substrates and have FM transition temperature (TC)â¼310Â K. A semiconducting polymer poly(3-octylthiophene) (P3OT) layer was deposited over the epitaxial LSMO layer by solution dip coating technique and with subsequent deposition of another epitaxial LSMO layer, forming a LSMO-P3OT-LSMO heterostructure. The effect of P3OT incorporation on magnetotransport properties of this heterostructure has been examined in the temperature range 77-350Â K. Large MR enhancement observed near room temperature in the FM regime is explained in terms of efficient magnetic field dependent carrier injection at LSMO/P3OT interface.
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Authors
Jitendra Kumar, Rajiv K. Singh, P.K. Siwach, H.K. Singh, Ramadhar Singh, R.C. Rastogi, O.N. Srivastava,