Electrical and optical activation studies of high dose Si-implanted Al0.18Ga0.82N

Both electrical and optical activation studies of Si-implanted Al0.18Ga0.82N have been made as a function of anneal time and anneal temperature to obtain maximum possible electrical activation efficiency. Silicon ions were implanted at 200 keV with doses of 5×1014 and 1×1015 cm−2, and the samples were annealed from 1100 to 1250 ∘C for 5-25 min with a 500 Å thick AlN cap in a nitrogen environment. The electrical activation efficiency and Hall mobility increase with anneal time and anneal temperature. Nearly 100 and 95% electrical activation efficiencies were obtained for Si-implanted Al0.18Ga0.82N with doses of 5×1014 and 1×1015 cm−2 and annealing at 1250 and 1200 ∘C for 25 min, respectively. The photoluminescence measurements show an excellent implantation damage recovery after annealing at these optimum anneal conditions, showing a strong near band emission. These optical results correlate well with the electrical results.