| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1596772 | Solid State Communications | 2006 | 4 Pages |
Abstract
We propose to use the exciton coupling between electrons and holes in different quantum wells to reach a strong Coulomb drag effect. The drag has to be really strong below the Mott transition when the most of the carriers are bound in excitons. We suggest to use the exciton drag for fabrication of DC transformer. Preliminary estimates for Si/SiO2/Si structure give the Mott transition temperature of the order of 100Â K.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
B. Laikhtman, P.M. Solomon,