Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1596833 | Solid State Communications | 2007 | 4 Pages |
Abstract
The results of electrical resistance and angle dispersive X-ray diffraction measurements at high pressures and ambient temperature on the chalcogenide spinel, CuIr2S4 are reported. The resistance increases gradually and reaches around 12Â GPa a value that is approximately forty times the initial value. Above 15Â GPa, the resistance decreases up to 30Â GPa and on further pressure increase tends to saturate at a value slightly above the ambient pressure value. Thus, the material exhibits a reentrant high conducting phase under pressure. The behaviour of the electrical resistance exhibits a close correlation with the structural evolution with pressure.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Alka B. Garg, V. Vijayakumar, B.K. Godwal, A. Choudhury, Hans D. Hochheimer,