| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1596875 | Solid State Communications | 2006 | 4 Pages |
Abstract
We present the calculation of diamagnetic susceptibility (χdia) of a hydrogenic donor in GaAs/AlxGa1−xAs quantum well for various compositions of Al and for different impurity locations within the well. The effect of Γ–X band crossing due to hydrostatic pressure on χdia is also investigated taking into account the non-parabolicity of the conduction band.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
P. Nithiananthi, K. Jayakumar,