Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1596893 | Solid State Communications | 2007 | 4 Pages |
Abstract
Large-area ZnS nanowires were synthesized through a vapor phase deposition method. X-ray diffraction and electron microscopy results show that the products are composed of single crystalline ZnS nanowires with a cubic structure. The nanowires have sharp tips and are distributed uniformly on silicon substrates. The diameter of the bases is in the range of 320-530Â nm and that of the tips is around 20-30Â nm. The strong ultraviolet emission in the photoluminescence spectra also demonstrates that the ZnS nanowires are of high crystalline perfection. Field emission measurements reveal that the ZnS nanowires have a fairly low threshold field, which may be ascribed to their very sharp tips, rough surfaces and high crystal quality. The perfect field emission ability of the ZnS nanowires makes them a promising candidate for the fabrication of flexible cold cathodes.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Yongqin Chang, Mingwei Wang, Xihong Chen, Saili Ni, Weijing Qiang,