| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1597001 | Solid State Communications | 2006 | 4 Pages |
The optical properties and the deep levels in bulk Si1−xMnx formed by using an implantation and annealing method were investigated. Transmission electron microscopy, X-ray diffraction, and Hall-effect measurements showed that the annealed bulk Si1−xMnx samples were p-type crystalline semiconductors. The photoluminescence spectra for the annealed bulk Si1−xMnx material showed luminescence peaks corresponding to excitons bound to neutral acceptors and related to dislocations due to the existence of Mn impurities. Deep-level transient spectroscopy results for the annealed bulk Si1−xMnx showed deep levels related to the interstitial and substitutial sites of the Mn+ ions. These results can help improve understanding of the optical properties and the deep levels in annealed bulk Si1−xMnx material.
